View STM102D_7701842.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

s mhop microelectronics c orp. a STM102D symbol v ds v gs i dm e as w a p d c 2 -55 to 150 i d units parameter 100 2.0 7.2 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary (n-channel) v dss i d r ds(on) (m ) @ vgs=4.5v 216 @ vgs=10v dual enhancement mode field effect transistor (n and p channel) absolute maximum ratings ( t c =25 c unless otherwise noted ) n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw nov,30,2011 1 details are subject to change without notice. 62.5 thermal resistance, junction-to-ambient r ja a t c =25 c product summary (p-channel) v dss i d r ds(on) (m ) @ vgs=-4.5v 547 @ vgs=-10v -100 -1.3 -4.7 20 p-channel t c =70 c a 1.6 -1.0 1.28 w t c =70 c c/w 25 16 ver 1.0 so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 g p p
4 symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) 1.0 v 173 g fs 2 s v sd c iss 305 pf c oss 36 pf c rss 23 pf q g 7.5 nc 8.2 nc q gs 16 nc q gd 4 t d(on) 5.5 ns t r 0.95 ns t d(off) 1.7 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time v ds =50v,i d =1a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =1.0a v ds =10v , i d =1.0a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =0.8a 216 243 328 m ohm c f=1.0mhz c v ds =50v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2.0a 0.83 1.3 v STM102D www.samhop.com.tw nov,30,2011 2 nc v ds =50v,i d =1a,v gs =4.5v 3.2 1.7 b ver 1.0
symbol min typ max units bv dss -100 v -1 i gss 100 na v gs(th) -1.0 v 438 g fs 3.6 s v sd c iss 840 pf c oss 47 pf c rss 29 pf q g 12 nc 12 nc q gs 48 nc q gd 9 t d(on) 15 ns t r 1.5 ns t d(off) 2.9 ns t f ns gate-drain charge v ds =-25v,v gs =0v switching characteristics gate-source charge v dd =-50v i d =-0.65a v gs =-10v r gen =6ohm total gate charge rise time turn-off delay time v ds =-50v,i d =-0.65a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-0.65a v ds =-10v , i d =-0.65a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =-250ua v ds =-80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-0.6a 547 455 614 m ohm c f=1.0mhz c v ds =-50v,i d =-0.65a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-3a -0.86 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ STM102D www.samhop.com.tw nov,30,2011 3 nc v ds =-50v,i d =-0.65a,v gs =-4.5v 7 _ -1.8 b ver 1.0
STM102D www.samhop.com.tw nov,30,2011 4 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature n-channel 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 v gs =3v v gs =3.5v v gs =4v v gs =10v 10 6 4 2 0 01.2 2.4 3.6 4.8 6.0 7.2 8 -55 c 350 280 210 140 70 0 234 5 1 v gs =10v v gs =4.5v 420 tj( c) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0.95 0.90 0.85 i d =250ua 1.00 1.05 1.10 1.15 ver 1.0 v gs =4.5v i d =0.8a c 25 tj=1 25 c v gs =10v i d =1a 1.3 v ds =v gs i d =250ua v gs =4.5v v gs =5v
STM102D www.samhop.com.tw nov,30,2011 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 400 300 0 2468 10 0 i d =1a 200 100 600 500 125 c 25 c 75 c 20.0 10.0 1.0 00.30.60.9 1.2 1.5 5.0 420 350 280 210 140 70 0 ciss coss crss 10 8 6 4 2 0 02 4 6 13 5 v ds =50v i d =1a ver 1.0 0 5 10 15 20 25 30 125 c 25 c 75 c 1 10 100 60 10 1 70 6 vds =50v,id=1a vgs =10v 0.1 1 10 100 10 1 0.1 r ds (on) limi t 1 m s 100us 10ms 10 us 0.01 v gs =10v single pulse t a =25 c td(on) tr td(off) tf dc 10 0 ms
STM102D ver 1.0 www.samhop.com.tw nov,30,2011 6 t p v (br )dss i as f igure 13b. o fr m w a ve s u nc l am p ed in d u ct i ve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance p dm t 1 t 2 1. r e ja (t)=r (t) * r e ja 2. r e ja =s ee datasheet 3. t jm- t a =p dm *r e ja (t) 4. duty cycle, d=t 1 /t 2 single pulse f igure 13a. u nc l am p ed s i n d u ct i ve t e t ci r c u i t r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STM102D www.samhop.com.tw nov,30,2011 7 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature p-channel tj( c) ver 1.0 10 8 6 4 2 0 12 3 4 5 6 v gs =-3v v gs =-4.5v v gs =-10v 0 -55 c 7.0 4.2 2.8 1.4 0 0 0.7 1.4 2.1 2.8 3.5 4.2 tj=125 c 5.6 900 750 600 450 300 150 0 2 468 10 1 v gs =-10v v gs =-4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 150 100 125 v gs =-4.5v i d =-0.6a v gs =-10v i d =-0.65a 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua v gs =-3.5v 25 c
STM102D www.samhop.com.tw nov,30,2011 8 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area ver 1.0 1200 1000 800 600 400 200 0 24 6 8 10 0 25 c i d =-0.65a 1200 1000 800 600 400 200 0 ciss coss crss 10 8 6 4 2 0 024 6 810121416 v ds =-50v i d =-0.65a 0.1 1 10 100 10 1 0.1 1 ms 100u s 1 10 100 100 10 1 1000 vds=-50v,id=-0.65a vgs=-10v 20.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 25 c 75 c 5.0 125 c 6 125 c 75 c 0510 15 20 25 30 10us d c 60 r d s ( on) lim i t v gs =-10v single pulse t a =25 c 0.01 tr td(off ) td(on) tf 10m s
t p v (br )dss i as figure 13b. o fr m w ave s u nc l am p e d in d u ct i ve STM102D www.samhop.com.tw nov,30,2011 9 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance ver 1.0 f igure 13a. u nc l am p ed s i n d u ct i v e t e t ci r c u i t r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STM102D ver 1.0 www.samhop.com.tw nov,30,2011 10 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.75 0.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l hx45 o a a1 a2 c d e e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
STM102D www.samhop.com.tw nov,30,2011 11 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0 +0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 n w m g v r h k s ver 1.0

▲Up To Search▲

Price & Availability of STM102D

	To Download STM102D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .